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DTB743XE / DTB743XM
Transistors
-200mA / -30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB743XE / DTB743XM
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
DTB743XE 0.7
1.6
0.3 0.55
Feature (3)
0.8
1.6
1) VCE(sat) is lower than the conventional products.
(2) (1)
0.1Min.
2) Built-in bias resistors enable the configuration of an 0.2 0.2
0.15 (1) GND
0.5 0.5
inverter circuit without connecting external input EMT3 1.0
(2) IN
(3) OUT
JEITA No. (SC-75A)
resistors (see equivalent circuit). JEDEC No. Each lead has same dimensions
3) The bias resistors consist of thin-film resistors with Abbreviated symbol : M33
complete isolation to allow positive biasing of the
DTB743XM
input. They also have the advantage of almost
1.2
completely eliminating parasitic effects. 0.32
0.2
4) Only the on / off conditions need to be set for (3)
0.8
1.2
operation, making the device design easy. 0.22
(1)(2)
(1) IN
0.2
0.13
0.4 0.4 0.5 (2) GND
0.8
(3) OUT
Structure VMT3
Each lead has same dimensions
PNP epitaxial plannar silicon transistor Abbreviated symbol : M33
(Resistor built-in type)
Absolute maximum ratings (Ta=25