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Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13002AU

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 600 V
VCBO Collector-Base voltage (open emitter) - 600 V
VCEO Collector-emitter voltage (open base) - 300 V
IC Collector current (DC) - 1.5 A
ICM Collector current peak value - 3 A
Ptot Total power dissipation Tmb 25