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PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 -- 2 October 2008 Product data sheet

1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160U.

1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -60 V
IC collector current [1] - - -1 A
ICM peak collector current single pulse; - - -2 A
tp 1 ms
RCEsat collector-emitter saturation IC = -1 A; [2] - 255 340 m
resistance IB = -100 mA

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300