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2SB1133 PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT
SC-67
!
ABSOLUTE MAXIMUM RATINGS (TA=25)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base voltage VEBO -5 V
Collector Current (DC) IC -3 A
Collector Dissipation (Tc=25) PC 20 W
Junction Temperature Tj 150
Storage Temperature Tstg -50~150
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= -150V , IE=0 -10