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PMV40UN
TrenchMOSTM ultra low level FET
M3D088
Rev. 01 -- 05 August 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM technology.
Product availability:
PMV40UN in SOT23.
1.2 Features
s Ultra low level threshold s Surface mount package.
1.3 Applications
s Battery management s High-speed switch.
1.4 Quick reference data
s VDS 30 V s ID 4.9 A
s Ptot 1.9 W s RDSon 47 m.
2. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g
1 2
MBB076 s
Top view MSB003
SOT23
Philips Semiconductors PMV40UN
TrenchMOSTM ultra low level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PMV40UN - plastic surface mounted package; 3 leads SOT23
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25