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2SK3075
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3075
RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high Unit: mm
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power : PO 7.5W
Power Gain : GP 11.7dB
Drain Efficiency : D 50%
ABSOLUTE MAXIMUM RATINGS (Ta = 25