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STP50NE08
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
STP50NE08 80 V <0.024 50 A
s TYPICAL RDS(on) = 0.020
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
3
s)
2
DESCRIPTION 1
This Power MOSFET is the latest development of
t(
uc
SGS-THOMSON unique "Single Feature SizeTM " TO-220
strip-based process. The resulting transistor
d
ro
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
P
remarkable manufacturing reproducibility.
le te
INTERNAL SCHEMATIC DIAGRAM
so
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
Ob
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
-
(s)
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ct
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
o du
Pr
ABSOLUTE MAXIMUM RATINGS
e
Symbol Parameter Value Unit
let
V DS Drain-source Voltage (V GS = 0) 80 V
V DGR
o Drain- gate Voltage (R GS = 20 k) 80 V
bs
V GS Gate-source Voltage