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3DD13002(NPN)
TO-251/TO-252-2L Transistor

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

1 2 3

Features
power switching applications
MAXIMUM RATINGS* TA=25 unless otherwise noted
Symbol Parameter Value Units TO-252-2L
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= 100AIE=0 600 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mAIB=0 400 V

Emitter-base breakdown voltage V(BR)EBO IE= 100AIC=0 6

ICBO VCB= 600VIE=0 100