Text preview for : bu2525df_1.pdf part of Philips bu2525df 1 . Electronic Components Datasheets Active components Transistors Philips bu2525df_1.pdf
Back to : bu2525df_1.pdf | Home
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Ths 25