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TECHNICAL DATA

NPN SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251

Devices Qualified Level
JAN
2N2218 2N2219
JANTX
2N2218A 2N2219A
JANTXV
2N2218AL 2N2219AL
JANS

MAXIMUM RATINGS
2N2218 2N2218A; L
Ratings Symbol Unit
2N2219 2N2219A; L
Collector-Emitter Voltage VCEO 30 50 Vdc
Collector-Base Voltage VCBO 60 75 Vdc
Emitter-Base Voltage 5.0 6.0 Vdc TO- 39* (TO-205AD)
VEBO
2N2218, 2N2218A
Collector Current IC 800 mAdc
2N2219, 2N2219A
Total Power Dissipation @ TA = +250C(1) 0.8 W
PT
@ TC = +250C(2) 3.0 W
Operating & Storage Junction Temp. Range 0
Top, Tstg -55 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 59 C/W TO-5*
1) Derate linearly 4.6 mW/0C above TA > +250C 2N2218AL,
2) Derate linearly 17.0 mW/0C above TC > +250C 2N2219AL
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IE = 10 mAdc 2N2218; 2N2219 V(BR)CEO 30 Vdc
2N2218A; L; 2N2219A; L 50
Emitter-Base Cutoff Current
VEB = 5.0 Vdc 2N2218; 2N2219 10