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PZT194
NPN Transistor
Elektronische Bauelemente Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Description
The PZT194 is designed for medium
power amplifier applications.

Features
* 1 Amps Continous Current

* 60 Volt VCEO REF. Millimeter REF.
Millimeter
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
* Complementary To PZT195 C 2.90 3.10 J 2.30 REF.
1 9 4 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
5 1.40 1.80
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MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
Collector Current (DC) 1
IC A
Collector Current (Pulse) 2
IB Base Current 200 mA
PD Total Power Dissipation 2 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
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ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 80 - - V I C= 100