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TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182

Devices Qualified Level
JAN
2N1893
2N720A JANTX
2N1893S
JANTXV

MAXIMUM RATINGS
Ratings Symbol All Devices Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 120 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector-Emitter Voltage (RBE = 10 ) VCER 100 Vdc TO-18 (TO-206AA)*
Collector Current IC 500 mAdc 2N720A
2N720A 2N1893, S
Total Power Dissipation @ TA = +250C (1) 0.5 0.8
PT W
@ TC = +250C (2) 1.8 3.0
0
Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol 2N720A 2N1893, S Unit TO-5*
0
Thermal Resistance, Junction-to-Case RJC 97 58 C/W 2N1893, 2N1893S
0 0 0
1) Derate linearly 2.86 mW/ C for 2N720A, 4.57 mW/ C for 2N1893, S TA > 25 C
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO Vdc
IC = 30 mAdc 80
Collector-Emitter Breakdown Voltage
V(BR)CER Vdc
IC = 10 mAdc, RBE = 10 100
Collector-Base Cutoff Current