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STC6NF30V
N-channel 30V - 0.020 - 6A - TSSOP8
2.5V-drive STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
< 0.025 (@ 4.5 V)
STC6NF30V 30V 6A
< 0.030 (@ 2.7 V)
Ultra low threshold gate drive (2.5V)
Standard outline for easy automated surface
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mount assembly TSSOP8
Double dice in common drain configuration
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Internal schematic diagram
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This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
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SizeTM" strip-based process. The resulting
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transistor shows extremely high packing density
for low on-resistance.
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Order code
Part number Marking Package Packaging
STC6NF30V C6NF30V TSSOP8 Tape & reel
February 2007 Rev 4 1/13
www.st.com 13
Contents STC6NF30V
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STC6NF30V Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VDGR Drain-gate voltage (RGS = 20K) 20 V
VGS Gate-source voltage