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SEMICONDUCTOR KTD1510
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER
A Q B
DARLINGTON TRANSISTOR. K
F
I
FEATURES
E
Complementary to KTB2510.
C
DIM MILLIMETERS
Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX
J
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO 160 V K 1.8 MAX
L _
20.5 + 0.5
Collector-Emitter Voltage VCEO 150 V M 2.8
P _
5.45 + 0.2
Emitter-Base Voltage VEBO 5 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
1. BASE
Collector Current IC 10 A
2. COLLECTOR (HEAT SINK)
Base Current IB 1 A 3. EMITTER
Collector PowerDissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
COLLECTOR
BASE
70
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=30mA, IB=0 150 - - V
DC Current Gain hFE VCE=4V, IC=7A 5000 12000 20000
Collector-Emitter Saturation Voltage VCE(sat) IC=7A, IB=7mA - - 2.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=7A, IB=7mA - - 3.0 V
Transition Frequency fT VCE=12V, IC=2A - 50 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 230 - pF
2008. 4. 18 Revision No : 2 1/3
KTD1510
2008. 4. 18 Revision No : 2 2/3
KTD1510
2008. 4. 18 Revision No : 2 3/3