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SEMICONDUCTOR 2N5550S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES A _
2.93 + 0.20
High Collector Breakdwon Voltage B 1.30+0.20/-0.15
C 1.30 MAX
D
: VCBO=160V, VCEO=140V 2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Low Leakage Current.
H
1 G 1.90
: ICBO=100nA(Max.) VCB=100V H 0.95
J 0.13+0.10/-0.05
Low Saturation Voltage K 0.00 ~ 0.10
L 0.55
P P
: VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA M 0.20 MIN
N 1.00+0.20/-0.10
Low Noise : NF=10dB (Max.)
N
C
P 7
J
M
K
1. EMITTER
MAXIMUM RATING (Ta=25 ) 2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V SOT-23
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Base Current IB 100 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
Tstg
Marking
Storage Temperature Range -55 150 Lot No.
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
ZP
1999. 11. 30 Revision No : 2 1/2
2N5550S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=100V, IE=0 - - 100 nA
Collector Cut-off Current ICBO
VCB=100V, IE=0, Ta=100 - - 100 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 160 - - V
Collector-Emitter *
V(BR)CEO IC=1mA, IB=0 140 - - V
Breakdown Voltage
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
hFE(1) VCE=5V, IC=1mA 60 - -
DC Current Gain * hFE(2) VCE=5V, IC=10mA 60 - 250
hFE(3) VCE=5V, IC=50mA 20 - -
Collector-Emitter * VCE(sat)1 IC=10mA, IB=1mA - - 0.15
V
Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA - - 0.25
Base-Emitter * VBE(sat)1 IC=10mA, IB=1mA - - 1.0
V
Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA - - 1.2
Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 30 pF
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
VCE=5V, IC=250 A
Noise Figure NF - - 10 dB
Rg=1k , f=10Hz 15.7kHz
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1999. 11. 30 Revision No : 2 2/2