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BUF420A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS: 3
s SWITCH MODE POWER SUPPLIES 2
s MOTOR CONTROL 1

DESCRIPTION TO-218
The BUF420A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in INTERNAL SCHEMATIC DIAGRAM
high-frequency power supplies and motor control
applications.

ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
V CEV Collector-Emitter Voltage (VBE = -1.5 V) 1000 V
V CEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 30 A
I CM Collector Peak Current (tp < 5 ms) 60 A
IB Base Current 6 A
I BM Base Peak Current (tp < 5 ms) 9 A
o
P tot T otal Dissipation at Tc = 25 C 200 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max O peration Junction Temperature 150 C

June 1997 1/4
BUF420A

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 0.63 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CER Collector Cut-off V CE = V CEV 0.2 mA
o
Current (R BE = 5 ) V CE = V CEV T c = 100 C 1 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5 V 0.2 mA
o
Current (IB = 0) V CE = V CEV V BE = -1.5 V Tc =100 C 1 mA
I EBO Emitter Cut-off Current V BE = 5 V 1 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 200 mA L = 25 mH 450 V
Sustaining Voltage
V EBO Emitter Base Voltage I E = 50 mA 7 V
(I C = 0)
V CE(sat ) Collector-Emitter IC = 10A IB = 1 A 0.8 V
o
Saturation Voltage IC = 10 A IB = 1 A Tc =100 C 2.8 V
IC = 20 A IB = 2 A 0.5 V
o
IC = 20 A IB = 2 A T c =100 C 2 V
V BE(s at) Base-Emitter IC = 10A IB = 1 A 0.9 V
o
Saturation Voltage IC = 10 A IB = 1 A Tc =100 C 1.5 V
IC = 20 A IB = 2 A 1.1 V
o
IC = 20 A IB = 2 A T c =100 C 1.5 V
di c /dt Rate of rise on-state V CC = 300 V R C = 0 t p = 3