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TIP47/TIP48
TIP49/TIP50
SILICON NPN SWITCHING TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP47, TIP48, TIP49 and TIP50 are silicon
multiepitaxial NPN planar transistors in Jedec
TO-220 plastic package, intented for use in linear
and switching applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN T IP47 TIP48 T IP 49 TIP50
V CBO Collector-Base Voltage (I E = 0) 350 400 450 500 V
V CEO Collector-Emitter Voltage (IB = 0) 250 300 350 400 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 1 A
I CM Collector Peak Current 2 A
IB Base Current 0.6 A
P tot T otal Dissipation at Tc ase 25 oC 40 W
o
Tamb 25 C 2 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
October 1995 1/4
TIP47/TIP48/TIP49/TIP50
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 3.125 C/W
o
R thj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CES Collector Cut-off for T IP47 V CE = 350 V 1 mA
Current (V BE = 0) for T IP48 V CE = 400 V 1 mA
for TIP49 V CE = 450 V 1 mA
for TIP50 V CE = 500 V 1 mA
I CEO Collector Cut-off for T IP47 V CE = 150 V 1 mA
Current (I B = 0) for T IP48 V CE = 200 V 1 mA
for TIP49 V CE = 250 V 1 mA
for TIP50 V CE = 300 V 1 mA
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for T IP47 250 V
(I B = 0) for T IP48 300 V
for T IP49 350 V
for T IP50 400 V
V CE(sat )* Collector-Emitter IC = 1 A I B = 0.2 A 1 V
Saturation Voltage
V BE(on) * Base-Emitter Voltage IC = 1 A V CE = 10 V 1.5 V
h FE* DC Current Gain I C = 0.3 A V CE = 10 V 30
IC = 1 A V CE = 10 V 10 150
fT Transition Frequency V CE = 10 V IC = 0.2 A
f = 2 MHz 10 MHz
hfe Small Signal Current V CE = 10 V IC = 0.2 A
Gain f = 1 MHz 25
Pulsed: Pulse duration = 300