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BC857S
PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
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.055(1.40) 8
.047(1.20) 0
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.026TYP
(0.65TYP)
.021REF
(0.525)REF
* Features
.096(2.45) .053(1.35)
.085(2.15) .045(1.15)
Power dissipation
PCM : 0.3 W (Tamp.= 25 C)
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.018(0.46)
Collector current .010(0.26)
.014(0.35) .006(0.15)
ICM : -0.2 A .006(0.15) .003(0.08)
.087(2.20)
Collector-base voltage .079(2.00) .004(0.10)
V(BR)CBO : -50 V .000(0.00)
Operating & Storage junction Temperature C1 B2 E2 .043(1.10) .039(1.00)
.035(0.90) .035(0.90)
Tj, Tstg : -55 C~ +150 C
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Marking : 3C E1 B1 C2 Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
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Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10