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CES2342
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

40V, 4.2A, RDS(ON) = 45m @VGS = 10V.
RDS(ON) = 58m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable.
D
Lead free product is acquired.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS