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STP12NB30
STP12NB30FP
N-CHANNEL 300V - 0.34 - 12A TO-220/TO-220FP
PowerMESHTM MOSFET

TYPE VDSS RDS(on) ID

STP12NB30 300 V < 0.40 12A
STP12NB30FP 300 V < 0.40 12A
s TYPICAL RDS(on) = 0.34
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
2 2
s VERY LOW INTRINSIC CAPACITANCES 1 1
s GATE CHARGE MINIMIZED
TO-220 TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s UNINTERRUPTIBLE POWER SUPPLY (UPS)

s DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP12NB30 STP12NB30FP
VDS Drain-source Voltage (VGS = 0) 300 V
VDGR Drain-gate Voltage (RGS = 20 k) 300 V
VGS Gate- source Voltage