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STB7NB40
N - CHANNEL ENHANCEMENT MODE
PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STB7NB40 400 V < 0.9 7.0 A

s TYPICAL RDS(on) = 0.75
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES 3
1
s GATE CHARGE MINIMIZED
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE D2PAK
TO-263
DESCRIPTION (Suffix "T4")
Using the latest high voltage technology, SGS-Thomson
has designed an advanced family of power Mosfets with
outstanding performances. The new patent pending strip
layout coupled with the Company's proprietary edge
termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
STB7NB40
V DS Drain-source Voltage (V GS = 0) 400 V
V DGR Drain- gate Voltage (R GS = 20 k) 400 V
V GS Gate-source Voltage