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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BF862
N-channel junction FET
Product specification 2000 Jan 05
Supersedes data of 1999 Jun 29
NXP Semiconductors Product specification
N-channel junction FET BF862
FEATURES PINNING SOT23
High transition frequency for excellent sensitivity in PIN DESCRIPTION
AM car radios
1 source
High transfer admittance.
2 drain
3 gate
APPLICATIONS
Pre-amplifiers in AM car radios.
2
handbook, halfpage 1
DESCRIPTION
Silicon N-channel symmetrical junction field-effect d
g
transistor in a SOT23 package. Drain and source are s
interchangeable.
3
Top view MAM036
Marking code: 2Ap.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 20 V
VGSoff gate-source cut-off voltage 0.3 0.8 1.2 V
IDSS drain-source current 10 25 mA
Ptot total power dissipation Ts 90 C 300 mW
yfs transfer admittance 35 45 mS
Tj junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2000 Jan 05 2
NXP Semiconductors Product specification
N-channel junction FET BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 20 V
VDG drain-gate voltage 20 V
VGS gate-source voltage 20 V
IDS drain-source current 40 mA
IG forward gate current 10 mA
Ptot total power dissipation Ts 90 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering note 1 200 K/W
point
Note
1. Soldering point of the gate lead.
MCD808
400
handbook, halfpage
Ptot
(mW)
300
200
100
0
0 40 80 120 160
Ts (