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Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S




FEATURES

High hFE
NPN silicon NPN

MAXIMUM RATINGS (Ta=25)
(T

CHARACTERISTIC Symbol Rating Unit


Collector-Base Voltage
VCBO 40 V
-
Collector-Emitter Voltage
VCEO 20 V
-
Emitter-Base Voltage
VEBO 5 V
-

Collector Current-Pulse
Ic 1000 mA
-

Collector Power Dissipation
PC 300 mW


Junction Temperature
Tj 150


Storage Temperature Range
Tstg -55150



DEVICE MARKING

M28S=28S.
M28S=28S.
300~600 500~700 600~1200

Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S

ELECTRICAL CHARACTERISTICS
TA=25
T =25 unless otherwise noted 25
noted

Characteristic Symbol Test Condition Min. Typ. Max. Unit


Collector Cutoff Current
ICBO VCB=25V,IE=0 -- -- 100 nA

Emitter Cutoff Current
IEBO VEB=5V,I C=0 -- -- 100 nA

Collector-Base Breakdown Voltage
V(BR)CBO IC=100A 40 -- -- V
-

Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA 20 -- -- V
-

Emitter-Base Breakdown Voltage
V(BR)EBO IE=100A 5 -- -- V
-

DC Current Gain VCE=1V,
hFE 300 -- 1200 --
IC=100mA

Transition Frequency
fT VCE=5V,IC=10mA -- 120 -- MHz


Collector-Emitter Saturation Voltage IC=600mA,
VCE(sat) -- -- 0.55 V
- IB=20mA

Guilin Strong Micro-Electronics Co.,Ltd.
GMM28S

DIMENSION