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CEM3053
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
-30V, -15A, RDS(ON) = 7m @VGS = -10V.
RDS(ON) = 15m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D D D D
Lead-free plating ; RoHS compliant.
8 7 6 5
Surface mount Package.
ESD Protected: 4000 V
SO-8
1 2 3 4
1 S S S G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS