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Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY FEATURES
VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Power MOSFET
0.018 @ VGS = 10 V 9 D 100% Rg Tested
30
0.028 @ VGS = 4.5 V 7.3
SCHOTTKY PRODUCT SUMMARY
VSD (V)
VDS (V) Diode Forward Voltage IF (A)
30 0.50 V @ 1.0 A 1.4
D
SO-8
S 1 8 D
Ordering Information:
S 2 7 D
Si4812DY
S D Si4812DY-T1 (with Tape and Reel) Schottky Diode
3 6
Si4812DY--E3 (Lead (Pb)-Free) G
G 4 5 D Si4812DY-T1--E3 (Lead (Pb)-Free with Tape and Reel)
N-Channel MOSFET
Top View
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET) 30
VDS
Reverse Voltage (Schottky) 30 V
Gate-Source Voltage (MOSFET) VGS "20
TA = 25_C 9 6.9
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b ID
TA = 70_C 7.5 5.6
Pulsed Drain Current (MOSFET) IDM 50
A
Continuous Source Current (MOSFET Diode Conduction)a, b IS 2.1 1.2
Average Foward Current (Schottky) IF 1.4 0.8
Pulsed Foward Current (Schottky) IFM 30
TA = 25_C 2.5 1.4
Maximum Power Dissipation (MOSFET)a b
a,
TA = 70_C 1.6 0.9
PD W
TA = 25_C 2.0 1.2
Maximum Power Dissipation (Schottky)a b
a,
TA = 70_C 1.3 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 40 50
Junction-to-Ambient (t v 10 sec)a
Maximum J
M i ti t A bi t )
Schottky 50 60
RthJA _C/W
MOSFET 72 90
Maximum Junction to Ambient (t = steady state)a
Junction-to-Ambient
Schottky 85 100
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 1
Si4812DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 0.004 0.100
Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V, TJ = 100_C 0.7 10
IDSS mA
(MOSFET + Schottky)
VDS = 30 V, VGS = 0 V, TJ = 125_C 3.0 20
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 9 A 0.012 0.018
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 4.5 V, ID = 7.3 A 0.019 0.028
Forward Transconductancea gfs VDS = 15 V, ID = 9 A 23 S
IS = 1.0 A, VGS = 0 V 0.45 0.50
Schottky Diode Forward Voltagea VSD V
IS = 1.0 A, VGS = 0 V, TJ = 125_C 0.33 0.42
Dynamicb
Total Gate Charge Qg 13 24
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 9 A 4 nC
Gate-Drain Charge Qgd 5.7
Gate Resistance Rg 0.2 2.4 W
Turn-On Delay Time td(on) 16 25
Rise Time tr 10 20
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, Rg = 6 W 35 50 ns
Fall Time tf 13 20
Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 35 70
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71775
2 S-41426--Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 50
VGS = 10 thru 5 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)
4V
30 30
20 20
TC = 125_C
10 10
3V 25_C
-55_C
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.10 1800
1500
r DS(on) - On-Resistance ( W )
0.08
C - Capacitance (pF)
Ciss
1200
0.06
900
0.04
600 Coss
VGS = 4.5 V
Crss
0.02 VGS = 10 V 300
0.00 0
0 10 20 30 40 50 0 5 10 15 20 25 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 1.6
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
8 ID = 9 A 1.4 ID = 9 A
rDS(on) - On-Resiistance
(Normalized)
6 1.2
4 1.0
2 0.8
0 0.6
0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 3
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.10
TJ = 150_C 0.08
r DS(on) - On-Resistance ( W )
10
I S - Source Current (A)
0.06 ID = 9.0 A
TJ = 25_C 0.04
1
0.02
0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Reverse Current (Schottky) Single Pulse Power (MOSFET)
20 50
10
I R - Reverse Current (mA)
40
1
30 V
Power (W)
30
0.1
10 V 20
0.01
10
0.001 20 V
0.0001 0
0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Junction Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 72_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71775
4 S-41426--Rev. G, 26-Jul-04
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
PDM
0.1
0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
Document Number: 71775 www.vishay.com
S-41426--Rev. G, 26-Jul-04 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1