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Philips Semiconductors Product Specification

PowerMOS transistor BUK456-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK456 -200A -200B
The device is intended for use in VDS Drain-source voltage 200 200 V
Switched Mode Power Supplies ID Drain current (DC) 19 17 A
(SMPS), motor control, welding, Ptot Total power dissipation 150 150 W
DC/DC and AC/DC converters, and Tj Junction temperature 175 175