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BUW50
SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s VERY LOW SATURATION VOLTAGE AND
HIGH GAIN FOR REDUCED LOAD
OPERATION
s TURN-ON AND TURN-OFF TAIL
SPECIFICATIONS
s TURN-ON dic/dt FOR BETTER RECTIFIER
CHOICE 3
2
s SWITCHING TIMES SPECIFIED WITH AND 1
WITHOUT NEGATIVE BASE DRIVE
s FAST SWITCHING TIMES
TO-218
s LOW SWITCHING LOSSES
s LOW ON-STATE VOLTAGE DROP
s BASE CURRENT REQUIREMENTS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-emitter Voltage (V BE = -1.5V) 250 V
V CEO Collector-emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 25 A
I CM Collector Peak Current 50 A
IB Base Current 6 A
I BM Base Peak Current 12 A
P Base Reverse Bias Base Power Dissipation 2 W
(B.E. junction in avalance)
P tot Total Power Dissipation at T case 25 o C 150 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max Operating Junction Temperature 175 C
October 1995 1/5
BUW50
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
Current (R BE = 10) V CE = V CEV T c = 100o C 5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA
Current V CE = V CEV V BE = - 1.5V T C =100 o C 5 mA
I EBO Emitter Cut-off V EB = 5 V 1 mA
Current (I C = 0)
VCEO(sus) Collector-Emitter I C = 0.2A 125 V
Sustaining Voltage L = 25 mH
V EB0 Emitter-base I E = 50 mA 7 V
Voltage (I c = 0)
V CE(sat) Collector-Emitter IC = 10A IB = 0.5A 0.4 0.8 V
Saturation Voltage IC = 20A IB = 2A 0.6 0.9 V
IC = 10A IB = 0.5A T j = 100 o C 0.5 0.9 V
IC = 20A IB = 2A T j = 100 o C 0.75 1.5 V
V BE(sat) Base-Emitter I C = 20A IB = 2A 1.25 1.6 V
o
Saturation Voltage I C = 20A IB = 2A T j = 100 C 1.25 1.7 V
di c /dt Rate of Rise of V CC = 160V RC = 0 I B1 =3A
on-state Collector T j = 25o C 50 100 A/