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DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93A
NPN 6 GHz wideband transistor
Product specification 1997 Oct 29
Supersedes data of September 1995
NXP Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
FEATURES DESCRIPTION
High power gain NPN wideband transistor in a plastic lfpage 3
Low noise figure SOT23 package.
PNP complement: BFT93.
Very low intermodulation distortion.
PINNING 1 2
APPLICATIONS
Top view MSB003
RF wideband amplifiers and PIN DESCRIPTION
oscillators. 1 base Marking code: R2p.
2 emitter
Fig.1 SOT23.
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
IC collector current (DC) 35 mA
Ptot total power dissipation Ts 95 C 300 mW
Cre feedback capacitance IC = 0; VCE = 5 V; f = 1 MHz 0.6 pF
fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 6 GHz
GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 13 dB
IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 7 dB
F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt; 1.9 dB
Tamb = 25 C
VO output voltage dim = 60 dB; IC = 30 mA; VCE = 8 V; 425 mV
RL = 75 ; Tamb = 25 C;
fp + fq fr = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 35 mA
Ptot total power dissipation Ts 95 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature +175 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 29 2
NXP Semiconductors Product specification
NPN 6 GHz wideband transistor BFR93A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts 95 C; note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 30 mA; VCE = 5 V 40 90
Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz 0.7 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1.9 pF
Cre feedback capacitance IC = ic = 0; VCE = 5 V; f = 1 MHz; 0.6 pF
Tamb = 25 C
fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 GHz
GUM maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; 13 dB
(note 1) Tamb = 25 C
IC = 30 mA; VCE = 8 V; f = 2 GHz; 7 dB
Tamb = 25 C
F noise figure (note 2) IC = 5 mA; VCE = 8 V; f = 1 GHz; 1.9 dB
s = opt; Tamb = 25 C
IC = 5 mA; VCE = 8 V; f = 2 GHz; 3 dB
s = opt; Tamb = 25 C
VO output voltage notes 2 and 3 425 mV
d2 second order intermodulation notes 2 and 4 50 dB
distortion
Notes 2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ---------------------------------------------------------
-dB .
2 2
1