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PMBTA42DS
NPN/NPN high-voltage double transistors
Rev. 02 -- 27 August 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted
Device (SMD) plastic package.
1.2 Features
I High breakdown voltage
I Two electrically isolated transistors
I Small SMD plastic package
1.3 Applications
I Automotive:
N High- and low-side switches
N Voltage regulators
I Communication: Telecom line interface
I Consumer: CRT TV
I Computing: Monitors
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 300 V
IC collector current - - 100 mA
ICM peak collector current single pulse; - - 200 mA
tp 1 ms
NXP Semiconductors PMBTA42DS
NPN/NPN high-voltage double transistors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR2
3 collector TR2
TR1
4 emitter TR2 1 2 3 TR2
5 base TR1
6 collector TR1 1 2 3
006aaa677
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMBTA42DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457
4. Marking
Table 4. Marking codes
Type number Marking code
PMBTA42DS P4
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 300 V
VCEO collector-emitter voltage open base - 300 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 100 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 100 mA
tp 1 ms
Ptot total power dissipation Tamb 25