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PZT157
PNP Transistor
Elektronische Bauelemente Silicon Planar High Performance Transistor
RoHS Compliant Product
SOT-223
Description
The PZT157 is designed for general
purpose switching and amplifier
applications.

Features
* 3 Amps Continous Current

* -60 Volt VCEO REF. Millimeter REF.
Millimeter
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
* Low Saturation Voltages C 2.90 3.10 J 2.30 REF.
1 5 7 D 0.02 0.10 1 6.30 6.70
Date Code
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
B C E H 0.25 0.35 4 3.30 3.70
o 5 1.40 1.80
MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
Collector Current (DC) -3
IC A
Collector Current (Pulse) -6
PD Total Power Dissipation 2 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O

o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -80 - - V I C=-100