ssd20n10-250d.pdf part of Secos ssd20n10-250d ssd20n10-250d.pdf, . Electronic Components Datasheets Active components Transistors Secos ssd20n10-250d.pdf text manual preview

Text preview for : ssd20n10-250d.pdf part of Secos ssd20n10-250d . Electronic Components Datasheets Active components Transistors Secos ssd20n10-250d.pdf

Back to : ssd20n10-250d.pdf | Home

SSD20N10-250D
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente 11A, 100V, RDS(ON) 280m

RoHS Compliant Product
A suffix of "-C" specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)
process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
and battery-powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.

FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed. A
B C
High performance trench technology. D

PRODUCT SUMMARY
GE
PRODUCT SUMMARY
VDS(V) RDS(on) m( ID(A)
280@VGS= 10V 11 K HF N
100
355@VGS= 4.5V 10 O
P
Drain M J

Millimeter Millimeter
Gate REF.
Min. Max.
REF.
Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
Source F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

ABSOLUTE MAXIMUM RATINGS (TA = 25