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ME3424
N-Channel 30-V (D-S) MOSFET
FEATURES
GENERAL DESCRIPTION RDS(ON)28m @VGS=10V
The ME3424 is the N-Channel logic enhancement mode power field RDS(ON)42m @VGS=4.5V
effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON)
technology. This high density process is especially tailored to Exceptional on-resistance and maximum DC current
minimize on-state resistance. These devices are particularly suited capability
for low voltage application such as cellular phone and notebook
APPLICATIONS
computer power management and other battery powered circuits Power Management in Note book
where high-side switching , and low in-line power loss are needed in Portable Equipment
Load Switch
a very small outline surface mount package.

PIN CONFIGURATION
(TSOP-6)
Top View

Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)

Parameter Symbol 10sec SteadyState Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS