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2STA1962
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = -230 V
Complementary to 2STC5242
Fast-switching speed
Typical fT = 30 MHz
Application 3
2
Audio power amplifier 1
TO-3P
Description
This device is a PNP transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STA1962 2STA1962 TO-3P Tube
July 2008 Rev 3 1/9
www.st.com 9
Electrical ratings 2STA1962
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -230 V
VCEO Collector-emitter voltage (IB = 0) -230 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC Collector current -15 A
ICM Collector peak current -30 A
Ptot Total dissipation at TC = 25