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MPS2907
TO-92 Transistor (PNP)

TO-92
1. EMITTER

2. BASE

3. COLLECTOR

Features
Complementary NPN Type available (MPS2222)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA
Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA
Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA
hFE(1) VCE=-10V,IC=-0.1mA 52
DC current gain hFE(2) VCE=-10V,IC=-150mA 100 300
hFE(3) VCE=-10V,IC=-500mA 32
VCE(sat) IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA -0.67 V
VBE(sat) IC=-150mA,IB=-15mA -1 V
Base-emitter saturation voltage
VBE(sat) IC=-500mA,IB=-50mA -1.2 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Delay time td 10 nS
VCC=-30V,Ic=-150mA,IB1=-15mA
Rise time tr 25 nS
Storage time tS VCC=-6V,Ic=-150mA, 225 nS
Fall time tf IB1=IB2=-15mA 60 nS
CLASSIFICATION OF hFE(2)
Rank L H
Range 100-200 200-300
MPS2907
TO-92 Transistor (PNP)

Typical Characteristics
MPS2907
TO-92 Transistor (PNP)