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SSG4841P
-9.0 A, -40 V, RDS(ON) 35 m
Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET

RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to SOP-8
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical B
applications are DC-DC converters and power
management In portable and battery-powered
products such as computers, printers, PCMCIA
L D
cards, cellular and cordless telephones.
M


A C
FEATURES
N
Low RDS(on) provides higher efficiency and
J K

extends battery life.
H G E
Low thermal impedance copper leadframe F

SOIC-8 saves board space.
Fast switching speed. REF. Millimeter REF. Millimeter
High performance trench technology. A
Min.
5.80
Max.
6.20 H
Min.
0.35
Max.
0.49
B 4.80 5.00 J 0.375 REF.
C 3.80 4.00 K 45