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3DD13003(NPN)
TO-126 Transistor
TO-126
1.BASE
2.500
2.COLLECTOR 7.400
7.800 1.100 2.900
1.500
3.EMITTER 3.900
3.000
3 4.100
3.200
2
10.60 0 0.000
1 11.00 0 0.300
Features
2.100
2.300
power switching applications
1.170
1.370
MAXIMUM RATINGS (Ta=25 unless otherwise noted) 15.30 0
15.70 0
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V 0.660
0.860
VEBO Emitter-Base Voltage 9 V 0.450
0.600
2.290 TYP
IC Collector Current -Continuous 1.5 A 4.480
4.680
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Test conditions MIN TYP MAX UNIT
Symbol
Collector-base breakdown voltage V(BR)CBO IC =5mA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=2mA, IC=0 9 V
Collector cut-off current ICBO VCB=700V,IE=0 1 mA
Collector cut-off current ICEO VCE=400V,IB=0 0.5 mA
Emitter cut-off current IEBO VEB=9V, IC=0 1 mA
hFE1 VCE=5V, IC= 0.5 A 8 40
DC current gain
hFE2 VCE=5V, IC= 1.5A 5
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.25A 0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.25A 1.2 V
Transition frequency fT VCE=10V,Ic=100mA, f =1MHz 5 MHz
Fall time tf IC=1A, IB1=-IB2=0.2A, VCC=100V 0.5