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2SA1300(PNP)
TO-92 Bipolar Transistors

TO-92
1. EMITTER

2. COLLECTOR

3. BASE

Features
High DC Current gain and excellent hFE linearity
Low saturation voltage

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -20 V
VCEO Collector-Emitter Voltage -10 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -2 A Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.75 W
Tj Junction Temperature 150
Tstg Storage Temperature -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-1mA , IE=0 -20 V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , IB=0 -10 V

Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V

Collector cut-off current ICBO VCB=-20 V , IE=0 -0.1