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Si9945AEY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.080 @ VGS = 10 V "3.7
60
0.100 @ VGS = 4.5 V "3.4
D1 D1 D2 D2
SO-8
S1 1 8 D1
G1 2 7 D1
G1 G2
S2 3 6 D2
G2 4 5 D2
Top View
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS "20
TA = 25_C "3.7
Continuous Drain Current (TJ = 175_C)a ID
TA = 70_C "3.2
A
Pulsed Drain Current IDM 25
Continuous Source Current (Diode Conduction)a IS 2
TA = 25_C 2.4
Maximum Power Dissipationa PD W
TA = 70_C 1.7
Operating Junction and Storage Temperature Range TJ, Tstg