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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification 1995 Sep 22
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
FEATURES DESCRIPTION
High efficiency NPN silicon planar epitaxial transistor
Small size discrete power amplifier encapsulated in a plastic, 4-pin lfpage 4 3
dual-emitter SOT343N package.
900 MHz and 1.9 GHz operating
areas
PINNING
Gold metallization ensures
excellent reliability. PIN DESCRIPTION 1 2
1 collector Top view MBK523
APPLICATIONS
2 emitter
Common emitter class-AB 3 base
operation in hand-held radio Marking code: T5.
4 emitter
equipment up to 1.9 GHz.
Fig.1 SOT343N.
QUICK REFERENCE DATA
RF performance at Tamb = 25 C in a common-emitter test circuit.
f VCE PL Gp c
MODE OF OPERATION
(GHz) (V) (mW) (dB) (%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 5 50
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms 0.9 6 650 10 50
0.9 6 360 12.5 50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC) 250 mA
IC(AV) average collector current 250 mA
Ptot total power dissipation up to Ts = 102 C; note 1 400 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to up to Ts = 102 C; note 1; 180 K/W
soldering point Ptot = 400 mW
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22 2
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 10 V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 V
ICES collector cut-off current VCE = 6 V; VBE = 0 100 A
hFE DC current gain IC = 50 mA; VCE = 5 V 25
Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz 3 pF
Cre feedback capacitance IC = 0; VCE = 6 V; f = 1 MHz 2 pF
MBG431
103
handbook, full pagewidth
Zth j-a
(K/W)
=1
0.75
102 0.5
0.33
0.2
0.1
0.05 tp
10 P
0.02 = T
0.01
tp t
T
1
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22 3
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
MLC819
2.0
handbook, halfpage
Cc
(pF)
1.5
1.0
0.5
0
0 2 4 6 8 10
V CB (V)
Fig.3 Collector capacitance as a function of
collector-base voltage.
1995 Sep 22 4
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 C in a common-emitter test circuit.
f VCE PL Gp c
MODE OF OPERATION
(GHz) (V) (mW) (dB) (%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 5; typ. 7 50; typ. 60
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms 0.9 6 650 10 50
0.9 6 360 12.5 50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820 MBG194
10 100 16 80
handbook, halfpage handbook, halfpage
Gp c Gp c
(dB) c (%) Gp (%)
(dB)
8 80
12 60
c
Gp
6 60
8 40
4 40
4 20
2 20
0 0 0 20
0 100 200 300 400 500 0.3 0.5 0.7 0.9 1.1
P L (mW) P L (mW)
Pulsed, class-AB operation. Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2. VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW. Circuit optimized for PL = 600 mW.
Fig.4 Power gain and efficiency as functions Fig.5 Power gain and efficiency as functions
of load power; typical values. of load power; typical values.
1995 Sep 22 5
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
List of components (see Fig.6)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
TR1 bias transistor, BC548 or equivalent note 1
C1, C4, C7 capacitor; notes 2 and 3 120 pF
C2 capacitor; note 2 6.8 pF
C3 capacitor; note 2 0.5 pF
C5 capacitor; note 2 1.2 pF
C6 capacitor; note 2 1.9 pF
C8 Philips multilayer capacitor 1 nF, 10 V
C9 Philips capacitor 1500 F, 10 V 2222 032 14152
L1 6 turns enamelled 0.7 mm copper wire length 3.5 mm
L4 2 turns enamelled 0.7 mm copper wire length 3 mm
L2, L3 RF choke, Philips 4312 020 36690
R1 metal film resistor 275
R2 metal film resistor 100
R3 metal film resistor 10
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
handbook, full pagewidth +Vbias +VCC
R1
R2 C9
R3 L3
TR1 L2
C8 C4
L1 L4
C1 C7
DUT
C2 C3 C5 C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22 6
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
List of components (see Fig.6)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
TR1 bias transistor, BC548 or equivalent note 1
C1, C6, C7, C8 capacitor; notes 2 and 3 24 pF
C2 capacitor; note 2 0.4 pF
C3 capacitor; note 2 2.4 pF
C4 capacitor; note 2 0.5 pF
C5 capacitor; note 2 1.2 pF
C9, C10 Philips capacitor 1500 F, 10 V 2222 032 14152
L1, L2 RF choke, Philips 4330 030 36301
R1, R2 metal film resistor 75
R3, R4 metal film resistor 10
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
handbook, full pagewidth L1
R1 R2
+Vbias
L2
TR1 +VCC
C9 C10
C7
C8
C1 C6
DUT
C2 C3 C4 C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22 7
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads SOT343N
D B E A X
y HE v M A
e
4 3
Q
A
A1
c
1 2
b1 bp w M B Lp
e1
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 1.15 0.2 0.2 0.1
0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-21
SOT343N
06-03-16
1995 Sep 22 8
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
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published in this document, including without limitation
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specifications and product descriptions, at any time and
specification of the product as agreed between NXP
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Semiconductors and its customer, unless NXP
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Limited warranty and liability Information in this accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
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1995 Sep 22 9
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
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Quick reference data The Quick reference data is an
necessary testing for the customer's applications and
extract of the product data given in the Limiting values and
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Limiting values Stress above one or more limiting
product is not suitable for automotive use. It is neither
values (as defined in the Absolute Maximum Ratings
qualified nor tested in accordance with automotive testing
System of IEC 60134) will cause permanent damage to
or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
no liability for inclusion and/or use of non-automotive
(proper) operation of the device at these or any other
qualified products in automotive equipment or
conditions above those given in the Recommended
applications.
operating conditions section (if present) or the
Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in
Constant or repeated exposure to limiting values will and use in automotive applications to automotive
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1995 Sep 22 10
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