Text preview for : mje210.pdf part of ST mje210 . Electronic Components Datasheets Active components Transistors ST mje210.pdf
Back to : mje210.pdf | Home
MJE210
SILICON PNP TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
The MJE210 is a silicon epitaxial-base PNP
transistor in Jedec SOT-32 plastic package,
designed for low voltage, low power, high gain
aydio amplifier applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (IE = 0) -40 V
V CEO Collector-Emitter Voltage (I B = 0) -25 V
V EBO Base-Emitter Voltage (IC = 0) -8 V
IC Collector Current -5 A
I CM Collector Peak Current -10 A
IB Base Current -1 A
Total Power Dissipation at T case 25 o C 15
P tot W
at T amb 25 o C 1.5
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
September 1997 1/4
MJE210
THERMAL DATA
o
R thj-amb Thermal Resistance Junction-ambient Max 83.4 C/W
o
R thj-case Thermal Resistance Junction-case Max 8.34 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Collector Cut-off V CB = -40 V -100 nA
I CBO
Current (I E = 0) V CB = -40 V T CASE = 125 o C -100