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2SA1 57 9

TRANSISTOR(PNP)
SOT-323

1. BASE
FEATURES
2. EMITTER
High breakdown voltage. (BVCEO = -120V)
3. COLLECTOR
Complements the 2SC4102

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector- Base Voltage -120 V
VCEO Collector-Emitter Voltage -120 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -50 mA
PC Collector Dissipation 100 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -120 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -120 V

Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V

Collector cut-off current ICBO VCB=-100V,IE=0 -0.5 A

Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A

DC current gain hFE VCE=-6V,IC=-2mA 180 560

Collector-emitter saturation voltage VCE(sat) IC=-10mA,IB=-1mA -0.5 V

Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 MHz

Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 3.2 pF

CLASSIFICATION OF hFE
Rank R S

Range 180-390 270-560

Marking RR RS
1

JinYu www.htsemi.com
semiconductor
2SA1 5 7 9
Typical Characteristics

2

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semiconductor