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BUK662R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 -- 14 October 2010 Product data sheet

1. Product profile

1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.

1.2 Features and benefits
AEC Q101 compliant Suitable for thermally demanding
Suitable for intermediate level gate environments due to 175