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PH2925U
N-channel TrenchMOS ultra low level FET
Rev. 04 -- 24 February 2009 Product data sheet

1. Product profile

1.1 General description
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Higher operating power due to low Low conduction losses due to low
thermal resistance on-state resistance
Interfaces directly with low voltage
gate drivers

1.3 Applications
DC-to-DC convertors Portable equipment
Notebook computers Switched-mode power supplies

1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25