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3DD13009(NPN)
TO-220 Transistor

TO-220
1. BASE

2. COLLECTOR

3. EMITTER
3
2
Features
1

power switching applications

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 12 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC =1mA, IE=0 700 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 400 V

Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V

Collector cut-off current ICBO VCB=700V,IE=0 100