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2N4401(NPN)
TO-92 Bipolar Transistors

1. EMITTER TO-92
2. BASE

3. COLLECTOR

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Power dissipation 0.625 W
TJ Junction Temperature 150
Dimensions in inches and (millimeters)
Tstg Storage Temperature -55to +150
RJA Thermal Resistance, junction to Ambient 357 /mW

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V
Collector cut-off current ICBO VCB=35V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=1V, IC= 0.1mA 20
hFE(2) VCE=1V, IC=1mA 40
DC current gain hFE(3) VCE=1V, IC= 10mA 80
hFE(4) VCE=1V, IC=150mA 100 300
hFE(5) VCE=2V, IC= 500mA 40
VCE(sat)1 IC=150 mA, IB=15mA 0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=500 mA, IB=50mA 0.75 V
VBE(sat)1 IC=150 mA, IB=15mA 0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC=500 mA, IB=50mA 1.2 V
VCE= 10V, IC= 20mA,
Transition frequency fT 250 MHz
f=100MHz
VCB=10V, IE= 0,
Output Capacitance Cob 6.5 pF
f=100KHz
Delay time td 15 nS
VCC=30V, VBE(OFF)=2V
Rise time tr 20 nS
IC=150mA, IB1=15mA
Storage time tS 225 nS
VCC=30V, IC=150mA
Fall time tf 30 nS
IB1=-IB2= 15mA
2N4401(NPN)
TO-92 Bipolar Transistors

Typical Characteristics