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Guilin Strong Micro-Electronics Co.,Ltd.
GM807-16 GM807-25 GM807-40
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO -45 Vdc
Collector-Base Voltage
VCBO -50 Vdc
-
Emitter-Base Voltage
VEBO -5.0 Vdc
-
Collector Current--Continuous
Ic -500 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR-5 Board(1)
PD 225 mW
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation
Alumina Substrate ,(2)TA=25 PD 300 mW
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature]
TJ,Tstg -55to+150
DEVICE MARKING
GM807-16=5A;GM807-25=5B; GM807-40=5C
Guilin Strong Micro-Electronics Co.,Ltd.
GM807-16 GM807-25 GM807-40
ELECTRICAL CHARACTERISTICS
(TA=25
25 unless otherwise noted 25 )
25
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO -45 -- Vdc
(Ic= -10mAdc,IB=0)
Collector-Base Breakdown Voltage
V(BR)CBS -50 -- Vdc
(Ic= -10Adc,VEB=0)
Emitter-Base Breakdown Voltage
V(BR)EBO -5.0 -- Vdc
(IE= -1.0Adc,Ic=0)
Collector Cutoff Current
(VCB= -20v) ICBO -- -100 nA
(VCB= -20Vdc,TA=150) -- -5.0 uA
ON CHARCTERISTICS
Characteristic Symbol Min Typ Max Unit
DC Current Gain HFE --
(Ic= -100mAdc,VCE= -1.0Vdc) GM817-16 100 -- 250
GM817-25 160 -- 400
GM817-40 250 -- 600
(Ic= -500mAdc,VCE= -1.0Vdc) 40 -- --
Collector-Emitter Saturation Voltage
- VCE(sat) -- -- -0.7 Vdc
(Ic= -500mAdc, IB= -50mAdc)
Base-Emitter Voltage -
(Ic= -500mAdc, VCE= -1.0Vdc) VBE(on) -- -- -1.2 V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
- fT 100 -- -- MHz
(Ic= -10mAdc,VCE= -5.0Vdc,f=100MHz)
Output Capacitance
Cobo -- 10 -- pF
(VCB= -10Vdc, f=1.0MHz)
1. FR-5=1.0