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SEMICONDUCTOR KTX102U
TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
B
Including two devices in US6. B1
(Ultra Super mini type with 6 leads)
1 6 DIM MILLIMETERS
Simplify circuit design. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Reduce a quantity of parts and manufacturing process. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
EQUIVALENT CIRCUIT (TOP VIEW)
H
T T 0.15+0.1/-0.05
6 5 4
MARKING
G
6 5 4
1. Q1 EMITTER
Lot No. 2. Q1 BASE
Q1 Q2 3. Q2 BASE
D4
4. Q2 COLLECTOR
Type Name
5. Q2 EMITTER
6. Q1 COLLECTOR
1 2 3
1 2 3
US6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150
Base Current IB -30
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150
Base Current IB 30
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 3 1/5
KTX102U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4.0 7.0
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10
Note) hFE Classification : Y(4)120~240, GR(6)200~400
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2.0 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note) hFE Classification : Y(4)120~240, GR(6)200~400
2008. 9. 23 Revision No : 3 2/5
KTX102U
Q 1 (PNP TRANSISTOR)
I C - VCE h FE - I C
-240 3k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I B =-2.0mA
Ta=25 C COMMON EMITTER
-200
DC CURRENT GAIN h FE
I B =-1.5mA
1k
-160
I B =-1.0mA 500
-120 300 Ta=100 C VCE =-6V
I B =-0.5mA Ta=25 C
-80
Ta=-25 C
I B =-0.2mA 100 VCE =-1V
-40
50
I B =0mA
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
-1 -10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
-0.5 I C /I B =10 -5 I C/I B=10
VOLTAGE VBE(sat) (V)
Ta=25 C
VOLTAGE VCE(sat) (V)
-0.3 -3
C
-0.1 00 -1
=1
Ta
-0.05 -0.5
-0.03 Ta=25 C
-0.3
Ta=-25 C
-0.01 -0.1
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
fT - IC I B - V BE
3k -1k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
VCE =-10V
Ta=25 C -300 VCE =-6V
BASE CURRENT IB (