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PZT359
PNP Silicon Planar
Elektronische Bauelemente High Current Transistor
RoHS Compliant Product


Features
5 Amps continuous current, up to 10 Amp peak current. SOT-223
Excellent gain characteristic specified up to 10Amps.
Very low saturation voltage



Mechanical Data C

Case: SOT-223 Plastic Package
1.6

Weight: approx. 0.021g E
1 2 3
C
Marking Code: 359 B
xxxx 1. BASE
(xxxx = date code) 2. COLLECTOR
3. EMITTER

Maximum Ratings and Thermal Characteristics
(TA = 25OC, unless otherwise noted)
Parameter Symbol Value Unit
O
Junction Temperature Tj +150 C
O
Storage Temperature Tstg -55 to +150 C
Collector-Base Voltage VCBO -140 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage V EBO -6 V
Collector Current (DC) IC -5 A
Collector Current (Pulse) IC -10 A
Total Power Dissipation PD 3 W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum.

Electrical Characteristics (TJ = 25 C, unless otherwise noted)
O




Parameter Symbol Min Typ. Max Uni Test Conditions
Collector-Base Breakdown Voltage BVCBO -140 - - V I C=-100A, I E=0
Collector-Emitter Breakdown Voltage
(w/ Real Device Limit)
BVCER -140 - - V I C=-1A, R B<=1K

Collector-Emitter Breakdown Voltage *BVCEO -100 - - V I C=-10mA, I B=0
Emitter-Base Breakdown Voltage BVEBO -6 - - V I E=-100A, IC=0
Collector-Base Cutoff Current I CBO - - -50 nA VCB=-100V, IE=0
Collector-Base Cutoff Current
(w/ Real Device Limit)
I CER - - -50 nA VCB=-100V, R<=1K

Emitter-Base Cutoff Current I EBO - - -10 nA VEB=-6V, IC=0
Collector Saturation Voltage 1 *VCE(sat)1 - -20 -50 mV I C=-100mA, I B=-10mA
Collector Saturation Voltage 2 *VCE(sat)2 - -90 -115 mV I C=-1A, I B=-100mA
Collector Saturation Voltage 3 *VCE(sat)3 - -160 -220 mV I C=-2A, I B=-200mA
Collector Saturation Voltage 4 *VCE(sat)4 - -300 -420 mV I C=-4A, I B=-400mA
Base Saturation Voltage *VBE(sat) - -1.01 -1.17 V I C=-4A, I B=-400mA
Base-Emitter Voltage *VBE(on) - -0.925 -1.16 V VCE=-1V, I C=-4A
DC Current Gain 1 *hFE1 100 200 - VCE=-1V, I C=-10mA
DC Current Gain 2 *hFE2 100 200 300 VCE=-1V, I C=-1A
DC Current Gain 3 *hFE3 50 90 - VCE=-1V, I C=-3A
DC Current Gain 4 *hFE4 30 50 - VCE=-1V, I C=-4A
DC Current Gain 5 *hFE5 - 15 - VCE=-1V, I C=-10A
Gain-Bandwidth Product fT - 125 - MHz VCE=-10V, IC=-100mA, f=50MHz

http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
PZT359
PNP Silicon Planar
Elektronische Bauelemente
High Current Transistor

Output Capacitance Cob - 65 - pF VCB=-10V, IE=0, f=1MHz
O n-Time ton - 110 -
ns VCC=-10V, IC=2A, I B1=-200mA,I B1=200mA
Off-Time toff - 460 -
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.




http://www.SeCoSGmbH.com Any changing of specification will not be informed individual

01-Jun-2002 Rev. A Page 2 of 2