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Philips Semiconductors Product Specification

PowerMOS transistor PHP10N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. The device is VDS Drain-source voltage 100 V
intended for use in Switched Mode ID Drain current (DC) 11 A
Power Supplies (SMPS), motor Ptot Total power dissipation 60 W
control, welding, DC/DC and AC/DC Tj Junction temperature 175