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SEMICONDUCTOR KHB8D8N25P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB8D8N25P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 8.8A
Drain-Source ON Resistance :
RDS(ON)=450m @VGS = 10V
Qg(typ.) = 29.5nC
MAXIMUM RATING (Ta=25 )
RATING
KHB8D8N25F
CHARACTERISTIC SYMBOL KHB8D8N25F UNIT
KHB8D8N25P
KHB8D8N25F2
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS 30 V
@TC=25 ID 8.8 8.8*
Drain Current A
Pulsed (Note1) IDP 35.2 35.2*
Single Pulsed Avalanche Energy EAS 285 mJ
(Note 2)
Repetitive Avalanche Energy EAR 7.4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns
(Note 3)
Drain Power Ta=25 74 38 W
PD
Dissipation Derate above 25 0.59 0.3 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
KHB8D8N25F2
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.69 3.29 /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2007. 5. 10 Revision No : 0 1/7
KHB8D8N25P/F/F2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 250 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.27 - V/
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=250V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.4A - 360 450 m
Forward Transconductance gFS VDS=40V, ID=4.4A (Note4) - 7.6 - S
Dynamic
Total Gate Charge Qg - 29.5 36.5
VDS=200V, ID=8.8A
Gate-Source Charge Qgs - 3.8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 14.5 -
Turn-on Delay time td(on) - 14.5 39
VDD=125V
Turn-on Rise time tr - 69 148
RG=25 ns
Turn-off Delay time td(off) - 73 156
ID=8.8A (Note4,5)
Turn-off Fall time tf - 60 130
Input Capacitance Ciss - 622 810
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 117 152 pF
Reverse Transfer Capacitance Crss - 37 48
Source-Drain Diode Ratings
Continuous Source Current IS - - 8.8
VGS Pulsed Source Current ISP - - 35.2
Diode Forward Voltage VSD IS=8.8A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=8.8A, VGS=0V, - 170 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 0.91 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 5.9mH, IS=8.8A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 8.8A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
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KHB8D8N25P/F/F2
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2007. 5. 10 Revision No : 0 5/7
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2007. 5. 10 Revision No : 0 6/7
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2007. 5. 10 Revision No : 0 7/7